Why Gallium Nitride?

In Class-D audio systems, the audio performance is impacted by the FET characteristics. GaN FETs enable higher fidelity Class-D audio amplifiers.
The low on resistance and low capacitance of the eGaN® FET enables high efficiency and lowers open loop impedance for low Transient Intermodulation Distortion (T-IMD). The fast switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).